Old Web
English
Sign In
Acemap
>
Paper
>
BIAS ACCELERATION OF DRAIN RESISTANCE INCREASE IN INP-BASED HEMTs AND RELIABILITY STUDY OF HEMT-ICs
BIAS ACCELERATION OF DRAIN RESISTANCE INCREASE IN INP-BASED HEMTs AND RELIABILITY STUDY OF HEMT-ICs
2003
K Fukai Yoshino
Suehiro Sugitani
Takatomo Enoki
Hiroto Kitabayashi
Koichi Murata
Takashi Makimura
Yasuro Yamane
Masahiro Muraguchi
Keywords:
Acceleration
Electronic engineering
Materials science
High-electron-mobility transistor
drain resistance
reliability study
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]