Sensitivity analysis of C-V global variability for 28 nm FD-SOI

This work describes a statistical model for the C-V global variability of 28 nm FD-SOI using the sensitivities of the capacitance to each process parameter calculated using Leti-UTSOI compact model. The percentage contribution of each process parameter to the total C-V variation is explored to identify the dominant source of variation at different bias conditions. The proposed model provides an alternate method to directly extract the variance of the process parameters from the measured C-V variability.