Old Web
English
Sign In
Acemap
>
Paper
>
Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer
Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer
2018
T. Nanjo
H Koyama
A. Imai
T. Watahiki
M. Yamamuka
Keywords:
Optoelectronics
normally off
Barrier layer
Annealing (metallurgy)
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]