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Valence Band Structure and Hole Mobility of Strained Ge/(111)Si 1–x Ge x
Valence Band Structure and Hole Mobility of Strained Ge/(111)Si 1–x Ge x
2015
Song Jianjun
Zhu He
Gao Xiang-yu
Zhang Heming
Hu Huiyong
Lv Yi
Keywords:
Mathematical optimization
Condensed matter physics
Electron mobility
Electron hole
Mathematics
Valence band
Band gap
valence band structure
Correction
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