Visible light emission at room temperature from anodized plasma‐deposited silicon thin films

In situ boron‐doped hydrogenated silicon films plasma‐deposited on various conductive substrates (including transparent oxides on glass) have been anodized in hydrofluoric acid solutions and subsequently electrochemically oxidized in an aqueous electrolyte. At room temperature, the resulting layers yield visible photoluminescence and electroluminescence intensities and spectral shapes similar to those of p‐type crystalline porous silicon obtained in the same way. The results demonstrate the technological feasibility of light‐emitting devices by applying electrochemical processes to deposited silicon‐based films.