Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell

A theoretical study of a vertical parallel junction under constant multispectral light has been made. By using a new approach of the carrier generation rate we determine the recombination and electrical parameters. The photocurrent density J_PH is presented as a calibrated function, diffusion length dependent. It intercepts with the experimental short circuit current density J_(SC), at the minority carriers diffusion length L value. The photo voltage as a calibrated function of surface recombination velocity intercepts the experimental open circuit voltage at the junction intrinsic recombination velocity. The shunt and series resistances are presented respectively as a calibrated function of the surface recombination velocity and it intercepts with the value of junction recombination velocity in short circuit SF_(SC) or in open circuit SF_(OC) at the experimental shunt and series resistances value.