Study on the Evolution of Defects in Helium-Implanted Tungsten

The microstructure of He+-irradiation induced defects in tungsten was studied as functions of annealing temperature by means of scanning electron microscope (SEM) and Doppler broadening positron annihilation spectroscopy (DB-PAS). The results show that the S parameter become higher after helium implanted in tungsten. When the annealing temperature increases to 923 K, plenty of large size of holes and new types of defects could be found in this sample.