Drift dominated InP/GaP photodiodes

The design of the drift dominated devices is focused in this paper. In this device GaP used as buffer layer between InP and Si since GaP is lattice matched to Si. The carrier concentration profile, and dark current voltage characteristics of InP/GaP photodiodes are discussed. The surface roughness of 2.48 nm is analysed by AFM. The results indicate that the drift dominated InP/GaP photodiodes have good spectral respose especially 40% internal quantum efficiency at shorter wavelength, which demonstrates the robustness of the drift dominated devices with the existence of dislocations and recombination centers.