Deposition of IGZO or ITZO Thin Films by Co-Sputtering of IZO and GZO or ITO Targets

New transparent conducting oxide (TCO) materials, indium-gallium-zinc-oxide (IGZO) and indium-tin-zinc-oxide (ITZO) were deposited on glass substrate by DC co-sputtering using IZO-GZO and IZO-ITO target combinations, respectively. Amorphous indium-gallium-zinc-oxide (a-IGZO) films possessing electron mobility of as high as 12 cm2V-1s-1 and resistivity of 0.15Ω・cm could be deposited. Hall mobility was ten times higher than that of amorphous silicon (a-Si), and comparable to that of commercial IGZO thin films. A good electrical resistivity of 0.17Ω・cm with a relatively high mobility of 10 cm2V-1s-1 was found for the ITZO films. These values were similar to those observed for the IGZO films in the present study.