MOS capacitance properties of silicon-based PZT thin films

Ferroelectric Pb(Zr0. 53 Ti 0.47 )O 3 (PZT) thin films were grown on silicon substrates by modified Sol-Gel method using C 4 H 6 O 4 Pb.3H 2 O, ZrO(NO 3 ) 2 .2H 2 O and Ti(OC 4 H 9 ) as raw materials. PbTiO 3 (PT) thin film was introduced as buffer layer. The microstructures of PZT thin films were characterized by XRD and SEM. Electrical properties such as C-V and leakage current characteristics of the films was investigated. The results show that PT buffer layer was helpful to improve the dielectric and ferroelectric properties of PZT thin films. PT buffer layer prevented the interface reaction and reduced the leakage current density of PZT/PT/Si structure about 10 -2 compared with that of PZT/Si structure.