Interface modification of a pentacene field-effect transistor with a submicron channel

Effective interface modification of a pentacene field-effect transistor with a submicron channel is performed. The two interfaces between the pentacene channel and the substrate and between the channel and the metallic electrode are markedly changed by nanoscale modification. At the substrate interface, thin polyparaxylylene film was formed, resulting in higher field-effect mobility of the short-channel transistor. A further increase in the field-effect mobility is achieved when multiple layers of tetracyanoquinodimethane are introduced to the pentacene film beneath the metallic electrodes.