Effects of Zn doping concentration on resistive switching characteristics in Ag /La1−x Zn x MnO\(_{3}/\textit {p}^{\mathrm {+}}\)-Si devices

Ag /La 1 −x Zn x MnO\(_{\mathbf {3}}\boldsymbol {/}\textit {p}^{\boldsymbol {+}}\)-Si devices with different Zn doping contents were fabricated through sol–gel method. The effects of Zn doping concentration on the microstructure of La 1 −x Zn x MnO 3 films, as well as on the resistance switching behaviour and endurance characteristics of Ag /La 1 −x Zn x MnO\(_{\mathbf {3}}\boldsymbol {/}\textit {p}^{\boldsymbol {+}}\)-Si were investigated. After annealing at 600 ∘ C for 1 h, the La 1 −x Zn x MnO 3 (x = 0.1, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with R H R S / R L R S ratios >10 3 . However, the endurance characteristics show considerable differences; x= 0 . 3 shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag /La 1 −x Zn x MnO\(_{\mathbf {3}}\boldsymbol {/}\textit {p}^{\boldsymbol {+}}\)-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at x= 0 . 1 is filamentary conduction mechanism, whereas that at x ≥ 0 . 2 is space-charge-limited current conduction.