Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates (Semiconductor technology)

AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon 〈111〉 substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon 〈111〉 substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.