In situ reflectance monitoring in MOVPE of a multiwafer reactor

A new design is presented that combines an interferometer and rotation monitor for in situ monitoring of variations in the growth process in Aixtron planetary reactors. Particular attention was paid to the growth of GaAs and Vertical Cavity Surface Emitting Laser (VCSEL) structures with the aim of increasing the level of understanding of the growth process and enable improvements in control and batch to batch reproducibility. It is anticipated that the properties of the Bragg reflectors will be predicted during the growth of the VCSEL structure by monitoring variations in the growth and using a predictive model based on the virtual interface model. Results are presented on planetary rotation under different reactor conditions, while the use of time resolved software to monitor growth, is discussed.