Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors

We report an electron-initiated 1064 nm InGaAsP avalanche photodetectors (APDs) with an InAlAs multiplier. By utilizing a tailored digital alloy superlattice grading structure, a charge layer and a p type InAlAs multiplier, an unity gain quantum efficiency of 48%, a low room temperature dark current of 470 pA at 90% breakdown voltage, and a low multiplication noise with an effective k ratio of ∼0.2 are achieved. The measured maximum gain factor is 5 at room temperature, which is currently limited by the non-optimized electric field profiles, and can be readily enhanced by modifying the doping and thickness parameters for the multiplier and the charge layer.