Strain Evaluation for Sapphire Using a Microfocus X-ray Diffraction System

A strain evaluation technique using a microfocus X-ray diffraction system was developed. The target current was 84 µA, and an X-ray brightness of 52×109 W/m2 was obtained. The X-ray was condensed to a converging angle of 0.09° with a convergent unit, and the minimum focus diameter was 60 µm. The maximum principal strain for a sapphire (1 -1 2) plane was in excellent agreement with the value estimated by strain gauge.