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A positron-annihilation study of residual vacancies in n -type-doped Si after annealing
A positron-annihilation study of residual vacancies in n -type-doped Si after annealing
2017
Hiroki Kawai
Yusuke Higashi
Nakasaki Yasushi
Takamitsu Ishihara
Keywords:
Ion implantation
Radiochemistry
Doping
Annihilation
Positron annihilation spectroscopy
Annealing (metallurgy)
Residual
Materials science
Positron
Molecular physics
positron annihilation
Correction
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