language-icon Old Web
English
Sign In
Acemap > Paper > Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

2020 
Keywords:
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    28
    References
    7
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.