Formation of nanoporous Ge layers by ion implantation at different temperatures of c-Ge substrate

Abstract The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = 1.3·1016 ion/cm2 and at current density J = 5 μA/cm2 for various substrate temperatures from 25 to 400 °C were studied. By scanning electron microscopy and optical reflection spectroscopy it was found that as a result of ion implantation in the temperature range from 25 to 300 °C an amorphous porous Ag:PGe layers of a spongy structure consisting of Ge nanowires on the c-Ge substrate surface are formed. The diameter of Ge nanowires increases from 16 to 24 nm with a rising of substrate temperature. It is shown that at the highest temperature of 400 °C, the porous structure does not form and the Ge surface remains flat on which the formation of Ag nanoparticles can be observed. A change in the level of the sample surface in dependence on substrate temperature due to swelling up to 280 °C was replaced by effective ion sputtering at higher temperatures.