An improved nonlinear model for InP/InGaAs HBTs

An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal S-parameters for an InP/InGaAs HBT.