ZnO devices: Photodiodes and p-type field-effect transistors
2005
The potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field-effect transistor (FET) devices that contain films of p-type ZnO with arsenic as the p-type dopant. These p-type films have high crystalline quality and show long-term stability. The ZnO UV photodetectors are based on p-n junctions. The FETs are made with metal-semiconductor Schottky contacts on p-type ZnO and are normally off (enhancement) devices. The spectral and electrical characteristics of these devices are presented and explained.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
24
References
153
Citations
NaN
KQI