Estudio de los Procesos Dispersivos en Pozos Cuánti cos de InGaAs/InAlAs por medio de las Técnicas de Fotorreflectancia y Fotoluminiscencia Study of the Dispersive Processes in InGaAs/InAlAs Quantum Wells by means of Photoreflectance and Photoluminiscence Techniques

In this work we present the study of the dispersive processes in InGaAs/InAlAs quantum wells using the photoreflectance (PR) and photoluminescence (PL) techniques. The samples of InGaAs/InAlAs were grown by the Metal Organic Chemical Vapor Deposition (MOCVD) with wells widths ranging from 6,5 nm to 10,5 nm. PR spectra were measured in the temperature range from 220 K to 300 K and the PL spectra in the temperature range from 11K to 300K. Th ere was a comparative analysis of the line shapes of the PR and PL spectras. We found inhomogeneus broadening in these spectras, wich were atributed to the local stresses in the wellbar rierinterface. From the analysis, we identified tha t the main dispersive process present in the studied optical transitions, is due to the exciton-phonon interaction.