Wavelength extension in GaSbBi quantum wells using delta-doping

Abstract Delta doped GaSbBi quantum wells (QWs) grown by molecular beam epitaxy was investigated to extend light emission wavelength at room temperature with the Bi content of 7.0%. The delta-doped GaSbBi QWs transition energy shifts up to 47.0 meV with increasing the Te dopant concentration from 0 to 4.56 × 10 12  cm −2 , resulting in maximum light emission of 2.42 μm, without obvious degradation of optical quality. The temperature coefficient of the band-gap for the delta-doped QW is only 0.099 meV/K compared with 0.265 meV/K from the undoped GaSbBi reference QW.