Nitrogen Effect on the Frequency Shift in Indium-GaAsN Quantum Wells Laser

The GaAsN/GaAs material system has recently been investigated as material for the realization of high-performance laser diodes emitting at the optical fiber window. Nitrogen content in GaAsN has a great influence on the band gap in this semiconductor. The knowledge of influence of nitrogen on optical transition energies in GaAsN/GaAs Quantum Wells (QWs) or Quantum Dots (QDs) structures is very important due to the possibility of adjustment of the optical transition energies to the telecommunication wavelength range when the system GaAsN is submitted to further indium elements giving rise to the quaternary alloys (In)GaAsN. The purpose of this work is to solve the coupled nonlinear rate equations describing the complex electric field and the carrier density in a simple model of the GaNxAs1-x or (In)GaAsN semiconductor laser. The model is sufficient to account for many of the observed dynamics in a single mode semiconductor laser in response to a dynamic drive current, such as relaxation oscillations and frequency chirping.