Flat-band pn-based unipolar barrier photodetector

Abstract This work presents a pn-based unipolar barrier detector architecture that exhibits no band bending under zero bias. A zero-bias flat band structure is created by utilizing materials with pre-aligned Fermi levels, which prevents charge transfer across the junction and depletion layer formation. The ideal structure shows no detectable g–r, tunneling, or surface leakage currents, and is more tolerant to variations in layer composition than other barrier detector architectures.