Photoluminescence of Modulation-Doped ZnSe:Te Grown by Using MBE

Modulation-doped ZnSe:Te samples, which indicate quite strong emissions at 2.68 (S1) and 2.42 (S2) eV at low temperatures, have been grown by using MBE. The samples consist of a ZnSeZnTe superstructure with ultra-thin ZnTe layers. The sample, which has S1 and S2 emission bands simultaneously, has a carrier transfer process from the S1 to the S2 state. The process leads to a super-linear dependence of the intensity of the S1 emission on the excitation intensity. We predict that the S1 and the S2 band construct a double well potential in the sample which indicates both emissions simultaneously.