Evaluation of the sputtering rate variation in SIMS ultra‐shallow depth profiling using multiple short‐period delta layers
2003
We have developed multiple short-period delta layers as a reference material for SIMS ultra-shallow depth profiling. Boron nitride delta layers and silicon spacer layers were sputter-deposited alternately, with a silicon spacer thickness of 1–5 nm. These delta-doped layers were used to measure the sputtering rate change in the initial stage of oxygen ion bombardment. A significant variation of sputtering rate was observed in the initial 3 nm or less. The sputtering rate in the initial 3 nm was estimated to be about four times larger than the steady-state value for 1000 eV oxygen ions. Copyright © 2003 John Wiley & Sons, Ltd.
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