Effect of edge contact on electronic transport in lateral Borophene/WTe2/Borophene heterojunctions

Abstract The contact between two-dimensional materials and metal plays an important role in the electronic devices. Using two dimensional metallic materials, such as borophene, to replace metal can avoid large electrode volume and possibly improve contact quality. Thus, in this work, we study the electronic transport properties of the in-plane hetorojunctions based on WTe2 and electrode materials boropheneβ12, boropheneχ3, boropheneΔ and honeycomb borophene by the first principle calculations. The different borophene structures result in different electronic structures and transport. It is found that the external electric field effectively reduces the height of Schottky barrier and induces the ohmic contact between borophene and WTe2. The results provide an insight into designing high-performance devices with electrode material borophene.