Novel 0.18um Single-Body Control Gate Cell Structure and Co-Salicide Technology for High-Density and High Performance Embedded NOR Flash Applications

A novel 2-T single-body control gate tied with two floating gates cell device structure using 0.18mum co-salicide technology for high-density and high performance embedded NOR flash applications has been developed. 2P6M CMOS, retrograded triple-well, conventional STI isolation, stack gate type, dual gate oxide as well as low k FSG interconnect were implemented in the process integration. A thin oxide deglazes step undercuts the pad oxide and liner oxidation at high-temperature are used to make the STI trench top corner smoother as the trench top corner is a key factor for data retention