Thermal properties of In–Sb–Te films and interfaces for phase change memory devices

Abstract The thermal properties of two different compositions (Te 12 and 17 at.%) of In–Sb–Te, obtained by metalorganic chemical vapour deposition, were investigated by the 3 ω method. The thermal conductivity of these chalcogenides, of interest for phase change memory applications, was found to decrease with increasing tellurium content. Thermal treatment at 480 °C of these materials caused an increase of their crystallinity and improved the thermal conductivity. However, this effect was more marked in the Te-poor composition than in the Te-rich one. In addition, the thermal boundary resistance between In–Sb–Te and various capping dielectrics (SiO 2 , Si 3 N 4 and Al 2 O 3 ) was measured and it was found to be closely correlated to the interlayer roughness, as indicated by X-ray reflectivity. In this regard, silicon oxide and alumina yielded a smoother and less resistive interface with In–Sb–Te than silicon nitride.