Estimation of optical proximity effect caused by mask fabrication error

To get wide lithography latitudes in ULSI fabrication, an optical proximity correction system is being widely used. We previously demonstrated that the optical proximity effect is highly dependent on beam interference conditions. By using an aperture with a spindle shaped opaque region and a controlling interference beam number optimized for imaging, we can obtain a high correction accuracy of less than +/- 0.01 micrometers for all kinds of pattern. To put the optical proximity correction into practical use, we must fabricate the corrected mask either by an EB or a laser writing system. But during mask writing, there is another problematic proximity effect. The optical proximity effect caused by mask fabrication error is becoming a serious problem. In this paper, we estimate the optical proximity effect caused by mask fabrication error. For EB writing, the mask feature size of 0.35 micrometers line changes dramatically in a space less than 0.8 micrometers in size; this is not tolerable. For a large pitch pattern, modified illumination reduces the DOF to 0 micrometers . Otherwise, laser writing stably fabricates a mask feature size for a 0.35 micrometers line, and the modified illumination reduces the optical proximity effect. This resist feature fluctuation is binary, so, correcting the mask pattern is easy. Although, it was wrongly thought that for larger pitch pattern, the DOF was reduced by the modified illumination, the DOF reduction actually came from the combination of the two proximity effects. Using an accurate mask produced by a laser writer, we do not observe any DOF reduction in modified illumination. Moreover, this has led to development of an optical proximity correction system with EB proximity correction.