Temperature distribution and thermal resistance analysis of high-power laser diode arrays

Abstract The accurate temperature measurement of high-power laser diode arrays is a considerable challenge due to their large temperature gradient and package structure. In this study, experiments based on the forward voltage method were set up to measure the transient temperature behavior of chips after the removal of heating load. A hybrid experimental/numerical method was developed to calculate multiple unknown interface thermal resistances and improve the prediction of the temperature distribution of high-power laser diode arrays by analyzing the transient temperature behavior of chips. The largest deviation between numerical and experimental results is 1.3 K. Based on the numerical results, thermal resistances for different layers and temperature distribution inside the chip were obtained and evaluated. Some suggestions for improving the thermal design of high-power laser diode arrays were derived.