Cryogenic Floating-Gate CMOS Circuits for Quantum Control

Voltage biases are often required to bias Qubits, and yet applying a static bias requires separate chip wires, dramatically increasing the system complexity. An ideal approach would be having a non-volatile digital or analog memory to avoid these issues. This work shows FG structures could be used to set and forget potentials and tunnel barrier tuning as well as enable memory applications. This work reports Floating-Gate (FG) measurements at cryogenic temperatures (T=4K), enabling reprogrammable FG devices in cryogenic environments. Using a multipurpose FG test structure, measurements show the FG device and circuit operation as well as charge programming measurements based on electron tunneling and hot-electron injection at T=4K and T=300K. These results open applications in classical cryogenic computing, controlling quantum computation, and other cryogenic temperature applications.