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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
2020
Mengwei Si
Yaoqiao Hu
Zehao Lin
Xing Sun
Adam Charnas
Dongqi Zheng
Xiao Lyu
Haiyan Wang
Kyeongjae Cho
Peide D. Ye
Keywords:
Transistor
Materials science
Density functional theory
Potential well
Optoelectronics
Dielectric
Amorphous solid
Threshold voltage
Atomic units
Band gap
Correction
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