Single and dual damascene integration of a spin-on porous ultra low-k material

For future high performance logic semiconductor products it is essential to lower the dielectric constant k of the intra- and interlayer isolators in combination with Cu single and dual damascene metallisation. In this paper we report on the first successful single and dual damascene integration of a porous methylsilsesquioxane based spin-on dielectric, JSR LKD. Deposition, etch, resist strip, clean and CMP behaviour and electrical results from both single and dual damascene integration are discussed.