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Effect of 3D Current Distribution in the Characterizing Parasitic Resistance of FinFETs
Effect of 3D Current Distribution in the Characterizing Parasitic Resistance of FinFETs
2015
P.-Y. Lin
Y.L. Chiu
F.-H. Meng
K H Chen
S. Hao
B.Z. Tien
T.S. Chang
C.-J. Lin
Y-C King
Keywords:
Parasitic element
Electronic engineering
Materials science
current distribution
Optoelectronics
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