Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates

In this work, an unusual ambipolar behavior in zinc nitride (Zn3N2) based thin film transistors (TFTs) on plastic substrates is presented. Polyethylene terephthalate is used as flexible substrate. The Zn3N2 thin film is deposited by magnetron radio-frequency sputtering at room temperature, whereas spin-on glass is used as gate insulator. The transfer and output characteristics are the typical reported for ambipolar TFTs. The extracted linear mobility was 1.8 cm2 V−1 s−1 for the n-type region and 0.15 cm2 V−1 s−1 for the p-type region. Using a physically-based simulator, the ambipolar output characteristics are simulated. The results presented are promising to develop novel ambipolar Zn3N2 TFTs.