Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes

The wavelength dependence of SiNx:H/Si interface defect generation caused by vacuum ultraviolet (VUV)/UV radiation from plasma etching processes was investigated. VUV radiation (λ 400 nm) had no influence on damage generation on the SiNx:H/Si structure, since the visible radiation was transmitted through upper SiNx:H film and underlying interface layer. The results revealed that UV radiation transmitted through the upper dielectrics can cause the electrical characteristics of underlying metal–oxide–semiconductor (MOS) devices to fluctuate.