Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy ion-irradiated Schottky diodes. After failures have been identified, the parts were cross sectioned to describe the structure of the failures and energy dispersive X-ray spectroscopy was used to characterize the materials in the failure structures.