Non-additive sintering of Si2N2O ceramic with enhanced high-temperature strength, oxidation resistance, and dielectric properties

Abstract The high-temperature mechanical and dielectric properties of Si2N2O ceramics are often limited by the introduction of a sintering aid. Herein, dense Si2N2O was prepared at 1700 °C by hot-pressing oxidized amorphous Si3N4 powder without sintering additives. A homogeneous network with short-range order and a SiN3O structure was formed in the oxidized amorphous Si3N4 powder during the hot-pressing process. Si2N2O crystals preferentially nucleated at positions within the SiN3O structure and grew into rod-like and plate-like grains. Fully dense ceramics with mainly crystalline Si2N2O and some residual amorphous phases were obtained. The as-prepared Si2N2O possessed a good flexural strength of 311 ± 14.9 MPa at 1400 °C, oxidation resistance at 1500 °C, and a low dielectric loss tangent of less than 5 × 10−3 at 1000 °C.