InGaP/AlGaInP Quantum Well Discrete Mode Laser Diode Emitting at 689 nm

A discrete-mode laser diode, fabricated in the In0.6Ga0.4P/AlGaInP multiple quantum well system, emitting a single mode at $\lambda =689$ nm is reported. The laser has an ex-facet output power >10 mW at 30 °C and operates mode hop free in the temperature range 0 °C to 50 °C.