The solid-state imaging device

PROBLEM TO BE SOLVED: To substantially control a dark current, blooming and color mixture when a PWL (p-type well region) structure is employed that deepens the PWL concentration profile, to improve the quantum efficiency of photoelectric conversion in a photo diode. SOLUTION: In a solid-state imaging device, including a plurality of picture elements comprising a photoelectric conversion section that converts incident light into a signal electric charge, and a transfer section that transfers the signal electric charge from the photoelectric conversion section, the photoelectric conversion section is formed in a first conductive-type well of a semiconductor substrate, having at least a second conductive-type first impurity region arranged between a first pixel photoelectric conversion part and a second pixel photoelectric conversion part adjacent to the first pixel, having a first conductive-type second impurity region with an impurity concentration higher than the well concentration arranged between the first impurity region and the photoelectric conversion section, and having a first conductive-type third impurity region between the well and the first impurity region, arranged at a position deeper than the second impurity region, with respect to the light acceptance surface of the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI