Properties of Ferromagnetic Josephson Junctions for Memory Applications

In this paper, we give a characterization of the RF effect of memory switching on Nb-Al/AlO x -(Nb)-Pd 0.99 Fe 0.01 -Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical characterization of such junctions, in comparison with standard Nb-Al/AlO x -Nb tunnel junctions. The use of microwaves to tune the switching parameters of magnetic Josephson junctions is a step in the development of novel addressing schemes aimed at improving the performances of superconducting memories.