Old Web
English
Sign In
Acemap
>
Paper
>
Formation of Si surface structure by fast C 60 ion beam irradiation
Formation of Si surface structure by fast C 60 ion beam irradiation
2020
Naoto Oishi
Yoshiki Murao
Noriko Nitta
Hidetsugu Tsuchida
Shigeo Tomita
Kimikazu Sasa
Koichi Hirata
Hiromi Shibata
Yoshimi Hirano
K. Yamada
Atsuya Chiba
Yuichi Saitoh
Kazumasa Narumi
Yasushi Hoshino
Keywords:
Optoelectronics
Materials science
surface structure
ion beam irradiation
Silicon
Semiconductor
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]