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Fabrication of n-Type GaN Layers by the Pulse Injection Method at 950°C for Intersubband Devices
Fabrication of n-Type GaN Layers by the Pulse Injection Method at 950°C for Intersubband Devices
2011
Jung-Seung Yang
Hassanet Sodabanlu
Masakazu Sugiyama
Yoshiaki Nakano
Yukihiro Shimogaki
Keywords:
Analytical chemistry
Materials science
Optoelectronics
Pulse (signal processing)
Fabrication
pulse injection
Correction
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