Uncovering the Indium Filament Formation and Dissolution in Transparent ITO/SiNx/ITO Resistive Random Access Memory
2020
The search for decent material systems is the most desirable to obtain superior performances in resistive random access memory (RRAM) devices. Nitride switching materials have attracted much attent...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
53
References
2
Citations
NaN
KQI