CMOS Integrated UV-Photodiodes☆

Abstract Highly sensitive UV-Photodiodes integrated in a versatile high voltage capable analogue 0.18 μm CMOS technology have been developed. They provide high effective quantum efficiency (EQE 30 – 80%) across the visible spectrum down to the vacuum UV and come on the cost of only a small modification to the core CMOS process. A single and a double junction diode as well as their dark reference devices and a special UV reference device for each are presented.