Ultra‐thin InGaN photodetectors for standing wave interferometry

In this work, we report on the fabrication as well as on the structural and optoelectronical characterisation of ultra-thin In-rich InxGa1–xN (0.56 < x < 1) metal-semiconductor-metal photodetectors designed for standing wave intensity profile measurements at the wavelength of He-Ne laser. In particular, In0.64Ga0.36N/GaN structures have shown a short time response close to the RC time constant of ∼0.6 μs at low fields, with transparency of more than 77%. Structural analysis of InB0.64BGaB0.36BN layer showed no phase separation phenomena. However, a large biaxial strain and a gradient in the In content along the c-axis have been observed driven by enormous biaxial strain in the heterostructure. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)