Progresses in state-of-the-art technologies of Ga2O3 devices

Gallium oxide (Ga2O3), an emerging ultra-wide bandgap semiconductor, owns the desirable properties of large bandgap of 4.6-4.9 eV, estimated critical breakdown field of 8 MV/cm, decent electron mobility of 250 cm2/Vs and high theoretical Baliga's figures of merit (BFOM) of around 3000. Bolstered by the capability of economic growth technique for high-quality bulk substrate, the β-Ga2O3 based materials and devices have been highly sought after in recent years for power electronics and solar-blind ultraviolet (UV) photodetectors. This article reviews the most recent advances of β-Ga2O3 power device technologies. It will be beginning with the summary which is carried out in the field of the introduction and underlying semiconductor properties of Ga2O3, following with the review of growth methods of high-quality β-Ga2O3 bulk substrates and epitaxial thin films. Then the brief perspectives on the advanced technologies and measurements in terms of Ohmic contact and interface state are provided. Furthermore, some state-of-the-art β-Ga2O3 photoelectronic devices, power devices and radio-frequency devices with distinguished performance are being fully described and discussed. Some solutions to alleviating the challenging issues, including the difficulty in p-type doping, low thermal conductivity and low mobility have also been presented and explored.