Analysis of ion-induced SEFI and SEL phenomena in 90 nm NOR flash memory

This paper mainly focuses on the SEFI and SEL of 90 nm NOR flash memories. Devices were irradiated by ions with different LET values from 12.9 to 65.8 MeV∙cm2/mg. SEFI observed in the device is further divided into bit SEFI, column SEFI and sector SEFI by severity of data corruption. Under irradiation with low LET value ions, SEL propagation-like phenomena were observed in this work, which was recognized as the process from local latch-up to global latch-up in the peripheral circuits. The underlying mechanisms for SEFI and SEL in NOR flash are discussed. Results show that the radiation-induced transient current should be responsible for SEFI, and different forms of SEFI depend on in which part of the circuit that transient current occurred. Besides, SEL in NOR flash is considered to be triggered from the peripheral circuits.